Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.366
Publication date: 16th December 2024
Perovskite-silicon tandem solar cells offer exceptional promise for high efficiency photovoltaics. However, integrating perovskite top cells uniformly onto textured silicon wafers remains challenging. Physical vapor deposition (PVD) methods, such as pulsed laser deposition (PLD)1, enable conformal and precise thickness control for perovskite deposition but are underexplored for this application.
Following our work on PLD of MAFAPbI3 for single junction devices2, we discuss two PLD-based approaches towards wide band gap halide perovskites deposited conformally onto texture silicon bottom cells. First, we discuss our recent developments on PLD of CsxFA1-xPb(BryI1-y)3 films for p-i-n single-junction and monolithic tandem devices. We discuss how the application of a PbI2-based template results in phase-pure, uniform CsxFA1-xPbI3 films with dense coverage on both planar and textured substrates. Cs0.2FA0.8PbI3 composition and a bandgap of 1.58 eV are confirmed. By controlling bromide ion incorporation in the PLD target, we achieve tunable bandgap energies (1.58–1.68 eV), aligning with silicon absorbers for current matching.
Additionally, we leverage the conformal properties of PLD, to fabricate inorganic scaffolds of PbI2:CsBr at deposition rates above 50 nm/min. The formation of the CsxFA1-xPb(BryI1-y)3 perovskite layer is finalised with a spin coating of organic cation solution containing FAI:FABr in ethanol. This also results in uniform films with dense coverage on both planar and textured substrates. Finally, both approaches are compared in terms of device performance, with preliminary results reaching above 13% PCE on 1 cm2 cells and textured silicon bottom substrates. This work highlights the importance of PVD techniques and their optimization for next-generation photovoltaics.
References
1. https://doi.org/10.1021/acsenergylett.4c01466
2. DOI: 10.1016/j.joule.2024.09.001
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