Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.342
Publication date: 16th December 2024
Bismuth-based perovskite-inspired materials (Bi-PIMs) have garnered significant attention as promising alternatives to lead (Pb)-based perovskites due to their lower toxicity and higher environmental stability. These semiconductors, which include compounds like Cu2AgBiI6 and A3Bi2I9, exhibit intriguing optoelectronic properties that make them suitable for photovoltaic applications. Bismuth (Bi)3+ shares similar electronic configurations with Pb2+, hinting to replicate the defect-tolerant electronic structure of lead-halide perovskites. This defect tolerance is crucial for reducing nonradiative recombination losses in Bi-based devices. Nevertheless, Bi-PIMs are also known to crystallize in disordered structures with a large number of surface defects/vacancies and grain boundaries compared to Pb-based perovskites, which explains their modest performance as photovoltaic absorbers. [1] This raises important questions: How can we mitigate the density and detrimental effect of defects in Bi-PIMs? Could the defect-driven structural characteristics of Bi-PIMs be utilized to expand the applications of these materials in photonics beyond photovoltaics?
In the first part of the talk, I will first summarize our key findings on selected Bi-PIMs for photovoltaic applications. In particular, I will present recent results on our compositional engineering efforts to improve morphology and charge carrier transport in Bi-Pims, leading to enhanced efficiency in both outdoor and indoor PV. [2,3]
In the second part of the talk, I will demonstrate second harmonic generation (SHG) for two low-toxicity Bi-PIMs, Cu2AgBiI6 (CABI) and AgBiI4 (ABI), using non-invasive nonlinear optical microscopy. The Bi-PIM with the largest number of cation vacancies, CABI, exhibits the most pronounced local inversion symmetry breaking, as assessed by the determination of the octahedral distortion angles. Consequently, CABI produces stronger SHG signals compared to ABI.
Our findings not only advance our understanding of Bi-PIMs but also open new avenues for their application in photonics.
P.V. thanks Academy of Finland (Decision No 347772) and Jane and Aatos Erkko Foundation (SOL-TECH project) for the financial support. This work is part of the Academy of Finland Flagship Programme, Photonics Research and Innovation (PREIN), Decision No. 320165.