Advancing III-V Nanocrystals: Achieving Facet Homogeneity
Sohee Jeong a b
a Department of Energy Science, Sungkyunkwan University, Suwon, South Korea
b Sungkyunkwan University Institute of Energy Science & Technology (SIEST), Sungkyunkwan University
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
III-V Quantum Dots and Beyond: Pioneering Core-only and Core-Shell Structures for Future Applications - #III-VQD
Sevilla, Spain, 2025 March 3rd - 7th
Organizers: Ivan Infante and Liberato Manna
Invited Speaker, Sohee Jeong, presentation 339
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.339
Publication date: 16th December 2024

Facet homogeneity in III-V nanocrystals is a critical factor for enhancing their optoelectronic properties and chemical stability. This talk explores recent advancements in synthesizing well-defined tetrahedral and tetrapodal geometries in indium-based III-V nanocrystals, emphasizing the facet-specific surface chemistry and its implications. By integrating halide-amine co-passivation strategies and advanced nuclear magnetic resonance analyses, we unveil the correlation between facet-dependent ligand dynamics and surface reactivity. These insights enable precise control over surface passivation, critical for reducing surface heterogeneity and enhancing photophysical properties. The discussion extends to the role of (111) facets in quantum confinement and their impact on device performance, including extended photoresponse in tetrahedral quantum dots. This comprehensive understanding of facet homogeneity not only addresses long-standing challenges in III-V nanocrystal synthesis but also opens new pathways for their application in next-generation optoelectronics.

Reference

[1] Semiconductor Nanocrystals: Unveiling the Chemistry behind Different Facets Acc. Chem. Res. 2023, 56, 1756

[2] Unraveling the Facet-dependent Surface Chemistry at Molecular Scale: Photo-assisted Oxidation of InP Nanocrystals J. Am. Chem. Soc. 2024, 146, 46, 31691

[3] Surface-Originated Weak Confinement in Tetrahedral Indium Arsenide Quantum Dots, J. Am. Chem. Soc. 2024, 146, 15, 10251

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