Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.322
Publication date: 16th December 2024
The evolution of Sb2Se3 heterojunction devices away from CdS electron transport layers (ETL) to wide band gap metal oxide alternatives is a critical target in the development of this emerging photovoltaic material. Metal oxide ETL/Sb2Se3 device performance has historically been limited by relatively low fill-factors (FF), despite offering clear advantages with regards to photocurrent collection. In this work, TiO2 ETLs were fabricated via direct current (DC) reactive sputtering and tested in complete Sb2Se3 devices. A strong correlation between TiO2 ETL processing conditions and the Sb2Se3 solar cell device response under forward bias conditions was observed and optimised. Ultimately, a SnO2:F/TiO2/Sb2Se3/P3HT/Au device with the reactively sputtered TiO2 ETL delivers an 8.12% power conversion efficiency (η), the highest cadmium-free Sb2Se3 device reported to-date. This is achieved by a substantial reduction in series resistance (Rs), driven by improved crystallinity of the reactively sputtered anatase-TiO2 ETL, whilst maintaining almost maximum current collection for this device architecture. This paper will also discuss the role of organic hole transport materials ‐ namely P3HT, PCDTBT, and spiro‐OMeTAD to modify device performance. By comparing these against one another, and to a reference device, their role in the device stack are clarified. These organic HTM layers are found to serve a dual purpose, increasing both the average and peak efficiency by simultaneously blocking pinholes and improving the band alignment at the back contact.
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