Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.301
Publication date: 16th December 2024
The charge carrier lifetime is a widely used metric for characterizing recombination in semiconductors. However, in the case of lead halide perovskites, there is considerable ambiguity surrounding reported lifetime values and their interpretation. This raises two fundamental questions: how should the lifetime be measured, and more importantly, what does it truly represent?
In theory and experiment, a multitude of different “lifetimes” can be defined, most of which are functions of the carrier density instead of constant. In doped semiconductors, mechanisms like detrapping and photodoping due to trapping can often be ignored, allowing different lifetime definitions to converge, so that no distinction is necessary. Additionally, their values are simplified to constants in many situations, streamlining the interpretation. None of these simplifications can be done for semiconductors with low intrinsic doping concentrations such as lead halide perovskites.
This presentation will explore the differences between the various definitions of time scales in theory and photoluminescence experiments and their connection to each other in intrinsic semiconductors. We provide experimental evidence indicating that high densities of shallow traps dominate transient photoluminescence decays in lead halide perovskites. Furthermore, we will clarify how these observations contrast with lifetimes derived from steady-state measurements, offering insights into the complexity of recombination dynamics in these materials.
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