The Hallmark of Ion Migration in Perovskite Solar Cells
Pilar Lopez Varo a
a Institut Photovoltaïque d'Île-de-France (IPVF), 18 Boulevard Thomas Gobert, Palaiseau, 91120, France.
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Numerical device modelling and SIMulation of SOLar cells and Light Emitting Diodes: methodologies and applications - #SIMUSOLED
Sevilla, Spain, 2025 March 3rd - 7th
Organizers: Juan A. Anta and Sandra Jenatsch
Invited Speaker, Pilar Lopez Varo, presentation 295
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.295
Publication date: 16th December 2024

Ion migration lies at the heart of perovskite solar cell (PSC) performance and stability. Different experimental techniques have been used to better understand the puzzling performance of ion migration in PSCs. In this talk, I will present our last results on the characterization of ion migration by two characterization measurements, X-Ray Photoemission Spectroscopy (XPS) [1] and impedance spectroscopy (IS) measurements [2] interpreted by drift-diffusion (DD) simulations.

For the characterization of the electronic and chemical properties of halide perovskites surface and interfaces to adjacent layers, XPS is a versatile technique. We use a lateral microstructure in which two different charge transport layers in co-planar contact configuration are separated by a perovskite channel constituting a lateral solar cell [1]. We apply reverse and forward bias with typical PSC operational conditions to the lateral microstructure to analyze the performance of the PSCs focusing on the evolution of band bending. 

 On the other hand, Impedance Spectroscopy is a consolidated tool to analyze the opto-electronic response of PSCs. Lately, it has been proved the proof of concept of the coupling of DD simulations with IS for a better understanding of device degradation [2]. I will present our last results on numerical DD simulations, and in particular, the study case of NiOx-based PSCs with various interface passivation treatments [2]. Our simulations approach several experimental measurements of IS under short-circuit conditions at different illumination intensities, along with bias-stress accelerated operational stability tests under constant illumination. Drift-diffusion simulations suggest that interface modification with the hole transport material may modify ion mobility within the perovskite layer. Our findings provide a systematic approach for characterizing instability mechanisms in PSCs using IS under short-circuit conditions.

I would like to thank all the people who have made possible this work. For the study of Impedance Spectroscopy, I would like to thank Osbel Almora, Juan Pablo Medina, Tianfang Li, Lluis F. Marsal, Juan A. Anta; as well as for the study of XPS: Mathieu Frégnaux, Davide Regaldo, Javid Hajhemati, Solène Béchu, Damien Aureau, Jean-Paul Kleider, Jean-Baptiste Puel and Philip Schulz. I thank the French Government in the frame of the program of investment for the future (Programme d’Investissement d’Avenir – ANR-IEED-002-01).

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