Coupling Ferroelectric to Colloidal Nanocrystals as a Generic Strategy to Engineer the Carrier Density Landscape

Mariarosa Cavallo^a, Sylvia Matzen^b, Thomas Maroutian^b, Yoann Prado^a, Jose Avila^c, Pavel Dudin^c, Debora Pierucci^a, Emmanuel Lhuillier^a

^aSorbonne Université, CNRS, Institut des NanoSciences de Paris, 75005 Paris

^bCentre de Nanosciences et de Nanotechnologies, CNRS-Université Paris-Saclay, Palaiseau, France

^cSynchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France

Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)

Advances in Nanocrystals: Fundamental approaches and technological perspectives - #NCAdv

Sevilla, Spain, 2025 March 3rd - 7th

Organizers: Carmelita Rodà and Matteo Zaffalon

Oral, Mariarosa Cavallo, presentation 200
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.200
Publication date: 16th December 2024

In the context of nanocrystal-based optoelectronic devices, the design of photodiodes faces a major challenge related to the design of building blocks as simple as the p-n junction that require some control on the carrier density profile. Gating appears as a possible alternative method [1] to shape the doping profile. The main limitations of the latter are related to the continuous application of DC bias, which increases energy consumption and can be a noise source.

In this work, we develop a general approach to achieve carrier density control by coupling the nanocrystal layer to a ferroelectric material. By utilizing the remnant polarization of the latter, the need for the application of gate bias is eliminated. The idea is to use the up and down change in the ferroelectric polarization to directly form a lateral p-n junction in the nanocrystal film, as has already been achieved for 2D materials.

We start by designing a ferroelectric-NC heterostructure made of Lead Zirconium Titanate (PZT) and HgTe NCs that act as an infrared active spin-coatable ink. The effect of the ferroelectric polarization on the HgTe band offsets is revealed using nano-beam X-ray photoemission microscopy. A photodiode is then built and enhanced photoresponse and reduced noise are obtained thanks to the built-in potential of the diode. [2] We then expand the concept to a large scale substrate using the commercially available periodically poled lithium niobate (PPLN) substrate. [3]

References:

[1] Chee, S.-S.; Gréboval, C.; Magalhaes, D. V.; Ramade, J.; Chu, A.; Qu, J.; Rastogi, P.; Khalili, A.; Dang, T. H.; Dabard, C.; Prado, Y.; Patriarche, G.; Chaste, J.; Rosticher, M.; Bals, S.; Delerue, C.; Lhuillier, E. Correlating Structure and Detection Properties in HgTe Nanocrystal Films. Nano Lett. 2021, 21, 4145–4151.

[2] Cavallo, M.; Bossavit, E.; Matzen, S.; Maroutian, T.; Alchaar, R.; Dang, T. H.; Khalili, A.; Dabard, C.; Zhang, H.; Prado, Y.; Abadie, C.; Utterback, J. K.; Dayen, J. F.; Silly, M. G.; Dudin, P.; Avila, J.; Lhuillier, E.; Pierucci, D. Coupling Ferroelectric to Colloidal Nanocrystals as a Generic Strategy to Engineer the Carrier Density Landscape. Adv. Funct. Mater. 2023, 33, 2300846.

[3] Cavallo, M.; Ram, A.; Pandey, S.; Maroutian, T.; Bossavit, E.; Ledos, N.; Khalili, A.; Zhang, H.; Prado, Y.; Nguyen, D. L.; Dang, T. H.; Majjad, H.; Biscaras, J.; Avila, J.; Dayen, J. F.; Lhuillier, E.; Pierucci, D. Using Wafer Scale Ferroelectric Domains of LiNbO3 to Form Permanent Planar p–n Junction in Narrow Band Gap Nanocrystals. Appl. Phys. Lett. 2023, 123, 253505.

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