Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.153
Publication date: 16th December 2024
Tin-based perovskites have emerged as a promising semiconductor due to their unique bandgap tunability and potential in all-perovskite multijunction tandems. Despite this potential, they currently lag in terms of stability and efficiency compared to their lead-based counterparts, primarily due to high defect densities from rapid thin-film formation and Sn vacancies caused by oxidation. As Sn oxidation is detrimental to device performance and stability, slower and controlled crystallization to reduce uncoordinated Sn is hypothesized to enhance device performance and stability. Researchers have extensively employed additive, cation, and solvent engineering to control the crystallization of Sn-based perovskites, though understanding of the process remains limited.
We aimed to deepen our understanding of the crystallization of Sn-based perovskites by measuring the photoluminescence (PL) while casting films to quantify the rate of crystallization and additional intermediate phases that may form. Utilizing additive engineering and in situ PL, we demonstrate we are able to significantly decrease crystallization rate relative to FASnI3 and PEA0.15FA0.85SnI3. Additionally, we are able to preferentially orient FASnI3 along the [001] and [010] planes, indicative of more controlled crystal growth. Additionally, we are able to grow FASnI3 thin films completely at room temperature, minimizing the amount of added energy into the system to oxidize Sn(II). Upon exposure to ambient conditions, x-ray photoelectron spectroscopy (XPS) measurements have shown increased stability of the engineered FASnI3 with significantly less Sn(IV) content compared to pure FASnI3 and 10.48% power conversion efficiency when implemented into a p-i-n solar device.
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