Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.143
Publication date: 16th December 2024
The introduction of nanoscale materials has enabled substantial technological advancements, with halide perovskites emerging as a promising class of materials due to their ability to self-assemble into structures, promoting charge confinement. These materials are particularly attractive because of their straightforward synthesis and low-cost production. Depending on the degree of isolation between metal halides achieved by organic or inorganic cations, halide perovskites can exhibit two-dimensional, one-dimensional, or quasi-zero-dimensional configurations. Among these, quasi-zero-dimensional perovskite derivatives have garnered attention for applications spanning photovoltaics, thermoelectrics, lasers, photodetectors, memristors, capacitors, and light-emitting diodes (LEDs).[1]
This work investigates the impact of sulphur doping on the thermal and electrical properties of bismuth-based perovskite derivatives. Sulphur doping was achieved by introducing bismuth tri-ethylxanthate into the precursor solution, with thin films fabricated using drop-casting or spin-coating techniques. Structural characterisation, employing X-ray diffraction, Raman spectroscopy, and grazing-incidence wide-angle X-ray scattering, confirmed the successful incorporation of sulphur into the crystal structure. Further insights into the material’s composition and morphology were obtained using X-ray photoelectron spectroscopy, CHNS elemental analysis, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. An extensive study of UV-visible spectroscopy, photoluminescence, inverse photoemission spectroscopy, and ultraviolet photoelectron spectroscopy has provided a comprehensive understanding of the energy band gap. Results demonstrated that only the 1% sulphur doping reduced resistivity by two orders of magnitude. Furthermore, thermal voltage measurements revealed values exceeding 40 mV K⁻¹ at room temperature (~300 K) in both doped and undoped bismuth-based perovskite derivatives, highlighting the potential of these materials for thermoelectric applications.[2]
V.T. acknowledges the Marie Skłodowska-Curie Action (grant agreement 798271) of the European Union’s Horizon 2020 research and innovation program, the Royal Society International Exchanges Award (IESR3193231), and Fondo di Ateneo Quota Competitiva, University of Milan-Bicocca (2023-ATEQC-0078).
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