Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.141
Publication date: 16th December 2024
Zinc Phosphide (Zn3P2) is a promising earth abundant absorber for photovoltaics, offering direct bandgap of (1.5 eV), high optical absorption coefficient in the visible range (104 - 105 cm-1) and long carrier diffusion length, making it ideal for thin-film solar cells.
Monocrystalline Zn3P2, grown via Selective Area Epitaxy (SAE) naturally forms textured films with periodic pyramid-shaped nanostructures [1], [2], [3]. The growth mechanism necessitates a SiO2 patterned substrate, where Zn3P2 can grow on selectively exposed area of the substrate.
These naturally occurring nanostructures can be controlled in height and periodicity, depending on the opening dimension, and offer potential light management benefits to minimize in-coupling and out-coupling losses. The patterned substrate is a consequence of the growth mechanism; however, it provides the advantages of shaping and reducing the p-n junction contact area with valuable prospects for enhanced carrier management.
In this study, we present comprehensive device modelling of textured Zn3P2-based solar cells using coupled 3D optical and electrical simulations, employing FDTD and a Schrödinger-Poisson drift-diffusion solver to optimize the solar cell design.
Optical simulations are used to study the optical phenomena occurring within this complex structure including Mie modes, Rayleigh anomalies, and Fabry-Perot resonances. These effects are analyzed as a function of the pyramid height, periodicity, and thickness of the thin film beneath the pyramid. By tuning these modes and their interactions through geometric adjustments, the photocurrent is optimized to approach up to 89% of the Lambertian limit.
Electrical simulations are employed to study the effect of the reduced p-n junction contact area between Zn3P2 and the substrate. The junction area fraction was varied from 100% (continuous interface) down to 1.4%. Analysis of the simulated JV curves under both illumination and dark conditions highlighted the benefits of reducing the junction area fraction, for enhancing the open-circuit voltage (Voc) up to 0.12V.
This optical-electrical model exploits the potential for Zn3P2-based solar cells grown by SAE combining advanced light management and optimized junction design to enhance performance.
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