Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.108
Publication date: 16th December 2024
Chalcohalide are a family of inorganic semiconductors material that, thanks to a band gap generally between 0.7 eV and 2.2 eV, are emerging for photovoltaic application.[1–4] Chalcohalides have a the general formula MChX, in which M is one or more metal cations, Ch is a chalcogen (S2-, Se2-, Te2-) and X is an halide (Cl-, Br-, I-).[5] In this class of materials, the mixed metal chalcohalide Sn2SbS2I3 has shown promising potential for photovoltaic application due to its suitable band-gap and stability. Initial studies on its photovoltaic performance were conducted by Nie et al., who fabricated a device based on this material, achieving a power conversion efficiency (PCE) of 4.04%.[6,7] This material is generally synthesized through different methods including solid state synthesis, microwave-assisted processes, solvothermal method, and heat-up procedure. However, these methods leads to a poor control over size and morphology of the final products. Here, we report the synthesis of this mixed-metal chalcohalide Sn2SbS2I3 by hot injection method. Using this procedure for the chalcohalide, and exploiting the possibility to vary the parameter involved in the reaction, i.g. ligand-precursor chemistry, concentration variation of the reactive species, injection temparutre and annealing time,[8] we have achieved an accurate control of the size and the shape of the final crystals through. The particles showed a Cmcm crystal structure and rod-shaped morphology characterized by a lenght and width of 9,9 ± 3,0 µm and 0,9 ± 0,3 µm, respectively. The band gap is around 1.70 eV confirming the promising application for solar cell technologies. These results highlight the hot-injection approach as a promising synthetic method to synthesize Sn2SbS2I3.
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