Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.097
Publication date: 16th December 2024
Valence Change Memory (VCM) cells are emerging as promising candidates for non-volatile memory and neuromorphic computing applications [1,2]. These devices typically employ a simple metal-insulator-metal (MIM) structure, where an applied voltage modulates the insulating oxide layer. This modulation drives the incorporation and redistribution of oxygen vacancies, enabling the oxide layer's resistance to switch dynamically between a high-resistance state (HRS) and a low-resistance state (LRS). These resistance states are non-destructively readable, offer rapid switching, and exhibit excellent scalability, CMOS (complementary metal-oxide-semiconductor) compatibility, and low power consumption [3–6].
Despite their advantageous properties, the reliability of VCM ReRAM devices remains a critical challenge, particularly as these devices approach commercial viability [7]. Experimental studies, such as those by Kempen et al., have demonstrated that extrinsic doping can significantly enhance the reliability of TaOx-based ReRAM by improving endurance and lowering the forming voltage [8].
Building upon these experimental insights, we incorporated dopants into our three-dimensional Kinetic Monte Carlo (3D KMC) simulation framework previously developed for analysing reliability phenomena in VCMs [9,10]. Our simulations investigated the influence of dopant concentration and energy levels on key reliability metrics, including variability and retention. The results corroborate the experimentally observed improvements, revealing the positive impact of doping on reliability and providing new insights into the underlying physical mechanisms. These findings contribute to advancing the understanding of dopant-driven reliability enhancements in VCM ReRAM technology.
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