Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.087
Publication date: 16th December 2024
A comparison of the resistive switching (RS) operation in memristors based on HfO2, Al2O3 and a bilayer made of both oxides is presented. The devices are fabricated using the TiN/Ti/dielectric/TiN stack, and they are measured for thousands of cycles to assess their cycle-to-cycle variability. A statistical analysis is performed including 1D and 2D algorithms. A compact modeling approach (using a modified version of the Stanford model) is implemented to describe RS operation and variability. Finally, a 3D circuit-breaker-based simulation tool is employed to fit the experimental data and assess the role of thermal effects in the different dielectrics employed.
Bipolar valence change memory devices have been fabricated and measured [1]. The memristors fabrication is based on highly doped N-type (ρ = 4 mΩ·cm) silicon wafers with a 20 nm-thick Ti adhesion layer. The bottom electrode consists of a 50 nm-thick W layer. The dielectrics were grown by atomic layer deposition. The top electrode is composed of a 200 nm TiN/10 nm Ti bilayer. Thousands of I-V curves were measured in both types of devices under the ramped voltage stress regime. Resistive switching was characterized by means of consecutive set and reset cycles. RS parameters, such as the set and reset voltages, were obtained.
The set and reset voltages are obtained using different algorithms to assess the variability. We calculate one-dimensional coefficients of variation (1DCV) and two-dimensional ones (2DCV), the latter are explained in [2].
We complement the study by means of a compact modeling approach. We are able to reproduce the change that takes place in the I-V curves of the different technologies. Simulation using a 3D circuit breaker tool [3] is also performed to fit average I-V curves for the technologies studied here.
Research supported by the projects PID2022-139586NB-C44, PID2022-139586NB-C43 funded by MCIN/AEI/10.13039/ 501100011033 and FEDER, EU.
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