Publication date: 28th August 2024
Perovskites are highly attractive for optoelectronic devices due to their exceptional optical and electronic properties. Their tunable bandgaps, high light absorption, and promising charge carrier mobility make them ideal candidates for applications such as solar cells, light-emitting diodes, and photodetectors. [1] Moreover, perovskites can be fabricated using low-cost, solution-based processes, which allows for scalable production. [2] Their versatility, combined with the potential for enhanced device performance, makes them a promising material for the future of optoelectronics.
After an impressive 30-year career in (opto)electronics—spanning LEDs, lasers, photodetectors, HEMTs, and power devices—GaN continues to be an attractive subject of study, particularly when combined with emerging materials like perovskites. [3]
In this work, we present a detailed study of the electronic phenomena occurring at the interface between GaN and selected representatives of 3D and 2D MHP. Using optical spectroscopy methods such as contactless electroreflectance, we examine the influence of perovskite on the surface Fermi level of GaN. This analysis, supported by UV-photoelectron spectroscopy and time-resolved photoluminescence, allows us to address interfacial band alignment and carrier transfer. Based on the resulting interfacial properties, we propose the application of specific MHP/GaN hybrids in various optoelectronic devices, such as photodetectors, photonic synapses, and optical memory systems.
This work was supported by the National Science Centre (NCN) in Poland through grant Preludium-21 no. 2022/45/N/ST3/03465. E.Z. was also supported by the Foundation for Polish Science (FNP).
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