Publication date: 28th August 2024
In this presentation, we will discuss the operational principles of the perovskite light-emitting metatransistor, a new device concept that integrates monolithic, functional dielectric metamaterials into the active region of perovskite light-emitting transistors. Using methylammonium lead iodide (MAPbI3) films patterned by focused ion beam or nanoimprint lithography as an example, we will show how the unique combination of optical, luminescence, and charge transport properties of halide perovskites, combined with appropriate metamaterial design, enables a wide range of optical and electro-optical functionalities. These include enhanced, polarized, and directional photoluminescence, the optical Rashba effect, topological laser emission with optical bistability, and spin-polarized, electrically driven polaritonic emission in the strong coupling regime. Although these concepts are currently at the proof-of-principle stage, they may find application in next generation immersive visual technologies, which will require light emitting devices with unprecedented control over electroluminescence parameters at the subwavelength regime, including spectrum, polarization, luminosity, wavefront, and directionality.