Publication date: 28th August 2024
Memristors are two-terminal devices, where the resistance depends on previous current flow. This feature unites storage and computing capabilities in a single device, which might help address the von Neumann bottleneck of today’s computers. Furthermore, such in-memory computing and features like plasticity might enable simple realizations of neuromorphic computing.
Perovskites became interesting for memristors due to the hysteresis, they show in their current-voltage curve. Additionally, filamentary switching has been observed. Here, conductive nanofilaments are created, which can be reversibly ruptured and closed, turning the memristor on and off. These filaments are created either by defect ions in the perovskite or metal ions.
In this work, we report highest-performance and highly stable perovskite memristive switches (millions of cycles), whose switching behavior is further analyzed. This includes voltage-scan-rate and temperature dependent measurements to understand which parameters govern the values of SET and RESET voltage, as well as the switching dynamics. The effect of heat generation is measured by photoluminescence and thermography imaging and analyzed using a combined electrical and thermal model.
This research received funding from the European Union's Horizon 2020 research and innovation program under grant agreement no. 851676 (ERC StGrt).
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