Proceedings of MATSUS Fall 2024 Conference (MATSUSFall24)
DOI: https://doi.org/10.29363/nanoge.matsusfall.2024.287
Publication date: 28th August 2024
In this talk, I will present recent advances of artificial photosynthesis utilizing gallium nitride (GaN), which is the second most produced semiconductors next only to silicon. Through nanoscale, quantum, and catalyst engineering, conventional GaN-based semiconductors can be transformed to be efficient and stable photocatalyst materials for a broad range of artificial photosynthesis reactions, including solar water splitting, carbon dioxide reduction, methane oxidation, and nitrogen reduction to ammonia. By growing GaN nanostructures under N-rich conditions, the nonpolar surfaces can be transformed to be gallium oxynitride during harsh photocatalysis reaction, which not only protects the surfaces of the light absorber but leads to significantly enhanced photocatalytic and photoelectrochemical performance. Moreover, we have developed unique photocatalytic processes wherein high efficiency solar hydrogen can be produced utilizing tap water, or seawater, without any wire connection, or electricity input. The demonstration of large-scale solar water splitting systems and the performance will be discussed and reported, together with advances in carbon dioxide and nitrogen reduction to clean chemicals and fuels.