Earth abundant zinc phosphide as an emerging material for next generation PV
Anna Fontcuberta i Morral a
a Laboratory of Semiconductor Materials, Institute of Materials, School of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015, Lausanne, Switzerland
Proceedings of MATSUS Fall 2024 Conference (MATSUSFall24)
#ADINOS - Advances in inorganic thin film semiconductors for solar energy conversion
Lausanne, Switzerland, 2024 November 12th - 15th
Organizers: Mirjana Dimitrievska and Sudhanshu Shukla
Invited Speaker, Anna Fontcuberta i Morral, presentation 280
Publication date: 28th August 2024

Zinc phosphide (Zn3P2) constitutes as a promising solar absorber material due to its high absorption and carrier moblity as well as due to the abundance of zinc and phosphorous in the earth crust. Since the first published studies few decades ago, the efficiencies of Zn3P2-based solar cells have remained below its potential. We believe this is mostly due to the limited understanding of how to tune its optoelectronic properties.

In this talk we report on the progress towards the understanding of the growth and functional properties of the material such as light absorption, carrier concentration and mobility [1-5]. We report selective area growth as the method that results into the highest quality material as well as with the highest conversion efficiency, beyond the previous published record ~6%. We finalize by providing the main design rules for next-generation Zn3P2-based heterojunction solar cells, which should allow us to go beyond the current conversion values.

The author acknowledges the funding from SNF Consolidator Grant (BSCGI0-157705). and  funding from Horizon Europe Pathfinder project SOLARUP. This work was supported by the Swiss State Secretariat for Education, Research and Innovation (SERI) under contract number 22.00153.

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