Publication date: 28th August 2024
The development of high-quality QDs with tunable visible emission started with CdSe. QD designs containing Cd or Pb remain those with the brightest emission and most precise control over properties. However, as consumer applications demand QDs free of toxic elements, alternative materials have drawn considerable attention in recent years. InP-based QDs now offer photoluminescence efficiencies and a color tunability that are on par with those of high-quality Cd- and Pb-containing designs. This makes InP-based QDs an ideal phosphor for displays and lighting.
In stark contrast to these successes, InP-based QDs struggle in more demanding optical applications. In particular, the development of QD lasers using InP-based QDs lags behind other QD materials by more than two decades. Lasing from InP-based QDs has been reported only once, while the vast majority of the QD lasing literature has successfully used Cd-based or Pb-halide perovskite QDs. The near-total absence of InP-based QDs in the lasing literature is consistent with spectroscopic measurements, which have highlighted difficulties to achieve population inversion and gain from an ensemble of InP-based QDs.
In this presentation, I will show ensemble and single-particle experiments to investigate why InP-based QDs are not yet suitable for lasing applications, despite their high brightness, and how their performance may be improved. On the ensemble level, we find a correlation between the magnitude of charge-carrier losses on the sub-ps timescales and slow delayed emission on the ns-to-μs timescales. From single-particle measurements, we find a cause–effect relationship between hot-carrier trapping and delayed trap emission. Based on the characteristics of the trap-related emission, we propose that hot-carrier traps are most likely internal defects, for example located on the InP/ZnSe interface. This highlights the direction into which InP-based QDs should be improved for next-generation applications.
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