Proceedings of MATSUS Fall 2024 Conference (MATSUSFall24)
DOI: https://doi.org/10.29363/nanoge.matsusfall.2024.228
Publication date: 28th August 2024
Most semiconductor technologies rely on the intentional engineering of charge transport. In the case of halide perovskites — a semiconductor class currently developed for critical components in solar cells and light-emitting devices —reliable control of their charge transport is still needed. Such advances may help improve the performance of these semiconductors in current applications and open myriad new possibilities. In this talk, I will describe two routes to enhance the conductivity of halide perovskites. We first describe how introducing charge reservoirs inside expanded analogs of halide perovskites allows controlling their electrical doping.1 Secondly, we describe how mixed-valence in halide perovskite can be harnessed to enhance conductivity.2
References
1) Matheu, R.; Ke, F.; Breidenbach, A.; Wolf, N. R.; Lee, Y.; Liu, Z.; Leppert, L.; Lin,Y.; Karunadasa, H. I. Charge Reservoirs in an Expanded Halide Perovskite Analog:Enhancing High-Pressure Conductivity through Redox-Active Molecules. Angew. Chemie Int. Ed. 2022, 61, e202202911.
2) Li, J.; Matheu, R.; Ke, F.; Liu, Z.; Lin, Y.; Karunadasa, H. I. Mosaic CuI−CuII−InIII 2D Perovskites: Pressure-Dependence of the Intervalence Charge Transfer and a Mechanochemical Alloying Method. Angew. Chemie Int. Ed. 2023, 62, e202300957.
Agencia Estatal de Investigación y del Ministerio de Ciencia, Innovación y Universidades (PID2022-137777NA-I00 and RYC2021-031578-I) and Departament de Recerca i Universitats, del Departament d'Acció Climàtica, Alimentació i Agenda Rural, i del Fons Climàtic de la Generalitat de Catalunya (2023 CLIMA 00011)
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