Proceedings of MATSUS Fall 2024 Conference (MATSUSFall24)
DOI: https://doi.org/10.29363/nanoge.matsusfall.2024.202
Publication date: 28th August 2024
Hysteresis and time delay effects find important applications in devices that are explored for resistive switching and neuromorphic computation, such as halide perovskite and organic memristors and transistors for synapses and neurons. Impedance spectroscopy consists of the measurement of small signal ac impedance at fixed points of the operation curve. The frequency domain analysis of memristors and more generally, of conducting systems with memory features of some kind, provides essential information about the dynamic behaviour of the system. The impedance response of a memristor can be represented as a linear circuit made of resistances, capacitors, and inductors, with voltage-dependent elements. Here we show a classification of various manifestations of hysteresis by identifying common elements. The circuit enables a determination of the type of hysteresis in current-voltage curves under dynamic scans, and the transient response to a voltage step that causes the synaptic function in brain-like systems for neuromorphic computation.1,2 The equivalent circuit properties also establish the criteria for a Hopf bifurcation that produces spiking of artificial neurons.
Funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, grant agreement nº 101097688 ("PeroSpiker").
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