Publication date: 28th August 2024
Ion migration causes the degradation of perovskite solar cells. Ions are moved easily, with only a few hundred meV activation energy. Still, ions move many orders of magnitude more slowly than charges in metal halide perovskites. We use this difference in timescales to imprint memory in a resistive device. Because ions take very little energy to move, switching a memristive state in a perovskite device can also be very energy efficient. We show an artificial synapse that takes only a few hundred femtojoules to switch its resistive state[1]. This is achieved by downscaling the device to the micrometer scale. We use a novel back-contact architecture for these devices to avoid damage to the perovskite during lithography. We further discuss the working mechanism of these devices. Probably, the switching is achieved by filamentary formation. This mechanism would also allow the building of artificial neurons. With a memristive device and an artificial neuron, full hardware neural networks could be built. If time allows, I will also briefly discuss the implications of such filament formation on solar cell stability. We observe these filaments in lateral devices, and we see evidence for permanent, dramatic voltage-bias induced damage.
References: [1] Preprint: http://dx.doi.org/10.2139/ssrn.4592586
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