Publication date: 28th August 2024
Halide perovskite solar cells have revolutionized the photovoltaic field in the last decade, due to its direct bandgap and high absorption coefficient, with a benign defect physic, decreasing non-radiative recombination even in polycrystalline films. However, these properties are not just optimum for solar cell but for any optoelectronic device, causing that currently the research with these materials widespread to different optoelectronic fields. Among these fields the one that likely has taken more attention has been in light emitting diodes (LEDs), promoted by the high photoluminescence quantum yield (PLQY), especially for perovskite nanoparticles, narrow electroluminescence (EL) peak, providing purer colors, and versatility to tune the bandgap and consequently the emitting color. In this talk, I discuss different strategies to increase the performance, considering both the external quantum efficiency (EQE) and stability), but also the reproducibility. After an intensive work in perovskite LEDs field, it has been a huge improvement in the performance of these devices, however, the two main drawbacks of this system, the use of hazardous Pb and the long term stability, still to be open questions that have not been fully addressed. Preparation and optimization of Sn-based LEDs will be discussed as well as the possibilities of fabrication with industrially friendly methods as inkjet printing. We report as the use of additives and alternative synthesis of microcrystal precursor play a key role in the increase of LED luminance, EQE and stability of Sn-based perovskite LEDs.