Publication date: 28th August 2024
Suppression of ion migration for stable perovskite LEDs
The external quantum efficiency (EQE) of perovskite LEDs (PeLEDs) has dramatically improved to above 20% in the past few years. Operation stability becomes the one of the most challenging issue for the application of perovskite LEDs. Ion migration was acknowledged to be one of the main causes of degradation of perovskite LEDs.
In this talk, we will first discuss the effect of ion migration on the device performance and stability. We then will present our efforts to improve the stability of PeLEDs, including 1) suppressed ion migration in tin halide PeLEDs under device working conditions. In contrast to lead halide perovskites, no ion migration or phase segregation was observed in tin halide perovskites under illumination or an electric field. The origin was attributed to a much stronger Sn-halide bond and higher ion migration activation energy (Ea), which remain nearly constant under illumination. We further figured out the threshold Ea for the absence of ion migration to be around 0.65 eV. 2) Suppressed ion migration in perovskite single-crystal LEDs with enhanced operation stability. We used a space-confined inverse-temperature crystallization method to directly grow thin single crystals on top of hole transport layer. The MA0.8FA0.2PbBr3 based single crystal PeLEDs exhibited a decent EQE of 11.2%, a peak luminance of 84000 cd/m2, and a T50 lifetime of 12,500 hours at an initial luminance of 100 cd m−2, representing a 16,000-fold enhancement relative to the polycrystal PeLEDs.