Proceedings of MATSUS Fall 2024 Conference (MATSUSFall24)
DOI: https://doi.org/10.29363/nanoge.matsusfall.2024.056
Publication date: 28th August 2024
Tin halide perovskites (chemical formula ASnX3, with A=methylammonium MA+, formamidinium FA+ or cesium Cs+ and X= iodide I- and/or bromide Br-) have emerged as promising materials for next-generation photovoltaic and optoelectronic applications. Despite the promise, their power conversion efficiency has not yet matched that of lead-based solar cells (>25%). The soft nature of the tin-halide lattice and the facile oxidation of tin(II) to tin(IV) result in high probability of defect formation and increased background doping levels, thereby leading to significant carrier recombination and low power conversion efficiencies in devices.[1] Recent research has focused on understanding and enhancing carrier dynamics, particularly examining the effects of electronic doping and defect states on the quality and optoelectronic properties of the semiconductor. Optimizing doping levels and minimizing defect concentrations are critical for improving device performance.
By combining simulations with spectroscopy measurements, the role of defects in polycrystalline thin films of tin-based perovskites has been rationalized. Through chemical composition tuning, the chemistry of defects can be altered. Very high background doping limits carrier dynamics due to enhanced recombination of carriers through Auger processes. [2] Electronic doping can be controlled by adding excess tin in the precursor solution, such as extra SnF2, or by partially substituting iodine with bromine. Furthermore, fluoride can passivate Sn surface defects,[2] while halide alloying tailors the bandgap of the material and improves structural stability.[3] Importantly, both single-halide and mixed-halide tin perovskites exhibit excellent photostability.[4-5] The central cation does not directly affect electronic doping, it significantly influences the morphology of the polycrystalline film, which in turn affects mobility and conductivity.
Integrating these findings provides a comprehensive understanding of how doping, defect states, and chemical composition interact to influence the performance of tin halide perovskites. Leveraging these insights can pave the way for the development of highly efficient and stable perovskite-based devices, advancing the field of renewable energy and optoelectronics.
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