Understanding the Switching of Organic Electrochemical Transistors
Christine Luscombe a
a Okinawa Institute of Science and Technology Graduate University, 1919-1 Tancha, Onna, Japan
Proceedings of MATSUS Fall 2024 Conference (MATSUSFall24)
#OMIEC - Understanding Mixed Ionic-Electronic Conductors
Lausanne, Switzerland, 2024 November 12th - 15th
Organizers: Natalie Banerji and Olivier Bardagot
Invited Speaker, Christine Luscombe, presentation 051
Publication date: 28th August 2024

Understanding the factors influencing device switching times is essential for the effective use of organic electrochemical transistors (OECTs) in neuromorphic computing, bioelectronics, and real-time sensing. Current models of OECT operation fail to explain the experimental finding that turn-off times are generally much faster than turn-on times in accumulation mode. In this collaboration, devices containing polythiophene deriatives are studied. We employ operando optical microscopy to visualize the local doping level of the transistor channel. Our results reveal that turn-on occurs in two stages—initial propagation of a doping front, followed by uniform doping—whereas turn-off happens in a single stage. We attribute the faster turn-off to a combination of factors including channel geometry, differing kinetics of doping and dedoping, and carrier-density-dependent mobility. We identify ion transport as the limiting factor in the operational speed of our devices. This study offers valuable insights into the kinetics of OECTs and provides guidelines for engineering faster devices.

This work is based on research supported primarily by the National Science Foundation, first under DMR-2003456 and then under DMR-2309577. K.Y., Z.S. and C.-Z.L. acknowledge support from the National Natural Science Foundation of China (22125901) for supporting the synthesis of the PB2T-TEG polymer. J.W.O. and C.K.L.’s contributions to P3MEEMT polymer synthesis are based in part on work supported by the National Science Foundation, DMREF-1922259. Part of this work (transistor fabrication) was conducted at the Washington Nanofabrication Facility/Molecular Analysis Facility, a National Nanotechnology Coordinated Infrastructure (NNCI) site at the University of Washington with partial support from the National Science Foundation via awards NNCI-1542101 and NNCI-2025489.

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