Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
Publication date: 18th December 2023
Organic photodetectors exhibit promising potential as sensors, surpassing traditional Si-based photodetectors in various aspects. Despite their advantages, organic sensors often lack photomultiplication, a crucial feature for ultra-low light detection and cost-effective readout circuitry. Unlike inorganic semiconductors, which achieve photomultiplication through avalanche multiplication, this effect has not been implemented in organic photodetectors. An alternative method to achieve significant photo-gain is photogating in phototransistors. Although light-induced bias stress is observed in many organic field-effect transistors (OFETs), it typically results in inefficient devices with limited charge-storing capabilities. Furthermore, most OFETs require high operating voltages and exhibit slower switching speeds compared to their inorganic counterparts.
In this study, we present the promising finding that well-established organic permeable base transistors (OPBTs) exhibit exceptional potential as photodetectors. OPBTs can operate at low driving voltages (up to 2 V) with switching speeds approaching 100 MHz, and they are entirely fabricated through thermal evaporation. We demonstrate photogating in OPBTs by trapping photogenerated holes in the few-nanometer-thin Al2O3 dielectric surrounding the permeable base electrode. This trapping effect is confined to the off-state of the transistor due to the strong field dependence of exciton dissociation in neat C60 layers. Consequently, there is a shift in the base electrode potential, leading to a threshold voltage shift and increased on-currents. Leveraging the hole-trapping properties of Al2O3, our devices exhibit substantial photo gain of up to 103 A/W and extended retention times. This adaption of OPBTs opens up potential applications for OPBTs as low-light phototransistors and photo-memory devices.
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