Investigating local electronic properties using EELS
Andrea Cicconardi c
a Dipartimento di Fisica, Università degli Studi di Genova, Via Dodecaneso 33, 16146 Genova, Italy
b Electron Microscopy Facility, Istituto Italiano di Tecnologia, 16163 Genoa, Italy
c Functional Nanosystems, Istituto Italiano di Tecnologia, via Morego 30, 16163 Genova, Italy
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
#PeroFF - Perovskite: from fundamentals to device fabrication
Barcelona, Spain, 2024 March 4th - 8th
Organizers: Lioz Etgar, Wang Feng and Michael Saliba
Poster, Andrea Cicconardi, 488
Publication date: 18th December 2023

Lead-based halide perovskites, particularly CsPbBr3, have emerged as promising candidates for optoelectronic applications owing to their tunable bandgap, high absorption coefficient, cost-effectiveness, and robustness against defects. This study employs Electron Energy Loss Spectroscopy (EELS) within a Transmission Electron Microscopy (TEM) framework to unravel the electronic and structural characteristics of CsPbBr3, with a primary focus on local bandgap estimate.

Utilising the python-based software Hyperspy [1] for EELS spectrum analysis, we delve into the complexity of CsPbBr3's electronic properties. In EELS, high-energy (normally 30-300 keV) electrons pass through the sample and are then dispersed according to the energy they have lost, resulting in a spectrum that offers detailed insights into the local electronic structure, including width and nature of the of bandgap, which are critical parameter for optoelectronics.

The computational analysis, demonstrated here, extracts key information about the sample. The dielectric function is determined using both the refractive index and the Kramers-Kronig method [2]. The dielectric function is then employed to retrieve information about the Cherenkov radiation contribution [3]. Thickness calculations are obtained directly from the hypermap of the sample by estimating the electron mean free path from the EELS spectrum. Finally, the bandgap is evaluated using two different approaches: one based on linear fits, similarly to the Tauc plot procedure often used in optics, and one identifying the inflection point of the signal.

The results highlight small local variations in bandgap values, ranging between 2.27eV and 2.28eV in estimates that are consistently robust across diverse methodological approaches. This work demonstrates the potential for EELS to extract crucial electronic information from inorganic halide perovskites, emphasising its potential for advancing our comprehension of this class of materials. The findings also highlight the need for meticulous analysis to confirm the stability and coherence of the methodology. As the focus remains on utilising EELS to uncover detailed electronic insights, further investigations are warranted to enhance the technique's reliability and robustness. This study contributes to the ongoing quest for a comprehensive understanding of CsPbBr3's electronic properties, specifically highlighting the utility of EELS to understand local properties on the nanoscale and direct the engineering of perovskite-based films and devices.

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