Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
Publication date: 18th December 2023
In the pursuit of efficient and sustainable photoelectrochemical devices, BiVO4 has been considered a promising photoanode material due to its favorable band structure for water oxidation. To overcome the challenges of poor charge transport and slow kinetics in BiVO4 photoanodes, SnO2 films have been commonly employed as electron-transporting layers due to their hole-blocking capabilities. However, this approach has encountered hurdles, such as high defect concentrations at the SnO2/BiVO4 interface and pinholes in SnO2 layers, which can lead to charge recombination. Here, to address these limitations and enhance the functionality of SnO2 as a hole-blocking layer, a ZrCl4 treatment was explored in BiVO4 photoanodes. Through photoelectrochemical, optical, and morphological characterizations, we demonstrate that ZrCl4 treatment significantly improves the hole-blocking properties of SnO2, leading to a notable enhancement in the overall photoanode efficiency. Specifically, a 37% increase in the photocurrent density (measured at 1.23 V vs. the reversible hydrogen electrode under 1 sun illumination) and a shift of the onset Voltage were recorded when the ZrCl4 treatment method was implemented.
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