Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
DOI: https://doi.org/10.29363/nanoge.matsus.2024.470
Publication date: 18th December 2023
Halide perovskites have been widely explored for numerous optoelectronic applications among which phototransistors appeared as one of the most promising light signal detectors. However, it is still a great challenge to endow halide perovskites with both mobility and high photosensitivity because of their high sensitivity to moisture in ambient atmosphere, which limits the efficiency of transporting and collecting charge carrier. Here, we explore FAPbBr3 perovskite quantum dots (QDs) phototransistor with band-like charge transport and measure a dark hole mobility of 14.2 cm2V-1s-1 at ambient atmosphere which is about an order of magnitude higher than solution processed perovskite QDs devices. Attaining both high mobility and good optical figures of merit, including photoresponsivity and detectivity, a detectivity of ~1016 Jones is achieved, which is a record for halide perovskite nanocrystals. Simple A-site salt (FABr) treatments offer a mechanism for connecting between perovskite QDs for better charge transfer in high-quality devices. All these important properties are superior to most advanced inorganic semiconductor phototransistor, indicating a promising future in optoelectronic applications.
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