Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
DOI: https://doi.org/10.29363/nanoge.matsus.2024.338
Publication date: 18th December 2023
Halide perovskite materials are mixed electronic and ionic conductors that find use in several applications. The ionic conductivity is responsible for a memory effect that leads to undesirable hysteresis in the solar cell configuration but it is a requirement in their use as a resistive memory. In this presentation, it is shown how conductive and insulating states are formed via migration of halide vacancy and electrochemically active metals halide perovskite useful as memristors. We show that the working mechanism and performance of the memory devices can be tuned and improved by a careful selection of each structural layer. Several configurations are evaluated in which structural layers are modified systematically: formulation of the perovskite,1 the nature of the buffer layer2,3 and the nature of the metal contact4. We show that in order to efficiently promote migration of metal contact the use of pre-oxidized metals greatly enhance the performance of the memristor and reduces the energy requirements. Overall, we provide solid understanding on the operational mechanism of halide perovskite memristors that has enabled increased stabilities approaching 105 cycles with well separated states of current and further improvements expected.5
We thank the Spanish MCIN for financial support under the project TAROT (PID2022-141850OB-C21).
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