Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
DOI: https://doi.org/10.29363/nanoge.matsus.2024.138
Publication date: 18th December 2023
Photodiodes based on organic semiconductors exhibit many advantageous properties including tailorable light absorption, low embodied energy manufacturing, structural conformality, and low material toxicity. These properties make organic photodiodes attractive for emerging photodetector applications, especially for novel applications requiring different optoelectronic and mechanical properties than provided by conventional photodiodes based on inorganic semiconductors.[1] However, thus far the specific detectivity of organic photodiodes has remained subpar relative to conventional photodiodes. A critical parameter limiting the specific detectivity of photodiodes is the dark saturation current. In organic photodiode devices, the dark saturation current is strongly limited by non-radiative processes resulting in dark saturation currents several orders of magnitude higher than expected for radiative band-to-band transitions; however, the origin of these non-radiative processes is still debated. In this work, we show that the dark saturation current, along with the specific detectivity, in organic photodiode devices is fundamentally limited by transitions via mid-gap trap states.[2] This new insight is generated by a universal trend observed for a large set of organic bulk heterojunction systems and substantiated by sensitive external quantum efficiency and temperature-dependent current measurements. These findings have important implications for organic photodiodes, providing new insight into the origin of non-radiative losses and the associated noise, establishing the performance limits for these devices.