On the role of mid-gap trap states in organic photodiodes
Oskar Sandberg a
a Physics, Faculty for Natural Science and Engineering, Åbo Akademi University, Finland
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
#NextGenPD - Next Generation Photo-and-radiation detectors
Barcelona, Spain, 2024 March 4th - 8th
Organizers: Ardalan Armin and Nicola Gasparini
Invited Speaker, Oskar Sandberg, presentation 138
DOI: https://doi.org/10.29363/nanoge.matsus.2024.138
Publication date: 18th December 2023

Photodiodes based on organic semiconductors exhibit many advantageous properties including tailorable light absorption, low embodied energy manufacturing, structural conformality, and low material toxicity. These properties make organic photodiodes attractive for emerging photodetector applications, especially for novel applications requiring different optoelectronic and mechanical properties than provided by conventional photodiodes based on inorganic semiconductors.[1] However, thus far the specific detectivity of organic photodiodes has remained subpar relative to conventional photodiodes. A critical parameter limiting the specific detectivity of photodiodes is the dark saturation current. In organic photodiode devices, the dark saturation current is strongly limited by non-radiative processes resulting in dark saturation currents several orders of magnitude higher than expected for radiative band-to-band transitions; however, the origin of these non-radiative processes is still debated. In this work, we show that the dark saturation current, along with the specific detectivity, in organic photodiode devices is fundamentally limited by transitions via mid-gap trap states.[2] This new insight is generated by a universal trend observed for a large set of organic bulk heterojunction systems and substantiated by sensitive external quantum efficiency and temperature-dependent current measurements. These findings have important implications for organic photodiodes, providing new insight into the origin of non-radiative losses and the associated noise, establishing the performance limits for these devices. 

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info