Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
DOI: https://doi.org/10.29363/nanoge.matsus.2024.118
Publication date: 18th December 2023
In conventional flexible perovskite solar cells (FPSCs) produced on plastic substrates such as polyethylene terephthalate (PET) and featuring a conductive transparent oxide layer like indium-doped tin oxide (ITO), the ITO and perovskite layers are susceptible to cracking when the devices are moderately bent. While changes in device series resistance can be indicative of cracks in the ITO layer, characterizing cracks in the perovskite layer is more complex.
At a microscopic level, perovskite layer cracking implies an upsurge in the density of bulk and surface defects, leading to an increase in trap states within the layer. This, in turn, can amplify the loss of photo-generated charge carriers through trap-assisted carrier recombination processes. However, comprehending and quantifying the impact of applied mechanical stress (MS) on device properties and behavior necessitates a sophisticated analysis of charge carrier generation, recombination, and extraction processes both before and after MS application [1].
This study is dedicated to examining the properties and behavior of FPSCs pre- and post-application of MS to unravel the dynamics of recombination losses induced by MS, providing insights into the mechanisms contributing to performance degradation in perovskite-based solar cells. The investigation involves a comprehensive analysis of device properties and behavior through experimental and theoretical approaches. The degradation of photoelectrical parameters in fabricated PFPSCs due to applied MS is elucidated by meticulously scrutinizing various recombination pathways within the perovskite layer.
This work is supported by the Ministry of Science and Higher Education of the Republic of Kazakhstan (Grant Number: AP14869871) and Nazarbayev University Collaborative Research Grant (Grant Numbers: 021220CRP1922 and 11022021CRP1505).
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