Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
DOI: https://doi.org/10.29363/nanoge.matsus.2024.058
Publication date: 18th December 2023
The efficiency of poly(3-hexylthiophene) (P3HT) – nonfullerene acceptor (NFA) based bulk heterojunction (BHJ) solar cells lacks considerably behind many other polymer donor:NFA systems. For reasons which are yet incomprehensible. Here, we report on a series of P3HT:NFA solar cells, and elucidate the origin of performance losses in terms of the photophysical processes. It is a matter of fact that the interfacial ionization energy (IE) offset is a critical parameter in NFA-based blends in determining the efficiency of the exciton-to-charge transfer (CT) state conversion. We show that while large IE offsets in excess of >0.9 eV still facilitate complete exciton quenching, the device internal quantum efficiency (IQE) is limited by geminate and / or non-geminate recombination processes in P3HT-based photoactive blends. Our finding shows a drop in IQE when the diagonal bandgap of the photoactive blend i.e the difference between the IE of the donor and the electron affinity (EA) of the acceptor is small irrespective of the IE offset. Understanding the relationship between the IE offsets, EA offsets at the interface of donor and acceptor materials, and the performance of organic solar cells (OSC) could improve the charge generation efficiency. Thus, enables us to understand the relation between small diagonal bandgap and the decrease of the IQE in energy gap law framework.
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