Proceedings of MATSUS Spring 2024 Conference (MATSUS24)
DOI: https://doi.org/10.29363/nanoge.matsus.2024.037
Publication date: 18th December 2023
MXenes have recently shown promising properties in a variety of device applications. In this talk, I will present recent results on using MXenes as gate materials in thin film transistors using MoS2 and GaN semiconductor channels. Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal-GaN interface, the direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. We show that Ti3C2Tx MXene films integrated into GaN HEMTs as the gate contact induce van der Waals heterojunctions between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibited an extremely low off-state current (IOFF) of 10−7 mA/mm, a record high ION/IOFF current ratio of ~1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off-state drain breakdown voltage of 1085 V, and a near-ideal subthreshold swing of 61 mV/dec. However, MXenes do not fare as well when used as contacts in MoS2 transistors. The origin in this difference will be discussed in the context of the interface between MXene and GaN and MoS2 channel materials.
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