Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
Publication date: 22nd December 2022
Semiconducting group IV-VI van der Waals crystals (MX, where M = Ge, Sn, and X = S, Se) are receiving increasing attention as two-dimensional thermoelectric materials, desired for their ability to convert waste heat into electricity [1]. Among them, SnSe is considered the most promising as it exhibits a remarkably high thermoelectric figure of merit (ZT), initially attributed to its low lattice thermal conductivity [2]. However, it has been shown that the electronic band structure plays an equally important role in thermoelectric performance. A certain band shape, described as a “Pudding Mold” and characteristic for all MXs, has been predicted to significantly improve ZT by combining good electrical conductivity with high Seebeck coefficient [3,4]. In this study, we explore this subtle feature experimentally for GeS, SnS, and SnSe by means of angle-resolved photoemission spectroscopy. The results reported here greatly contribute to general understanding of the valence band dispersion of MXs, and allowed us to determine the effective mass and Fermi level position of as-grown undoped crystals. Our findings are supported by ab initio calculations of the electronic band structure.
This work was supported by the National Science Centre (NCN) Poland OPUS 15 no. 2018/29/B/ST7/02135. ARPES and XPS spectra were measured in SOLARIS National Synchrotron Radiation Centre in Krakow, Poland, under the proposal no. 202043. Computational studies were supported by WCSS and PLGrid Infrastructure.
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