Exploitation of Inkjet-Printing for Light-Emitting Diodes
Giovanni Vescio a b, Gayathri Mathiazhagan a b, Sergio González-Torres a b, Jesús Sanchez-Diaz c, Alex Villanueva-Antoli c, Rafael Sánchez c, Andrés Gualdrón-Reyes c, Marek Oszajca d, Alina Hauser d, Sergi Hernández a b, Iván Mora-Seró c, Albert Cirera a b, Blas Garrido a b
a Department of Electronic and Biomedical Engineering, University of Barcelona
b Institute of Nanoscience and Nanotechnology (IN2UB), Universitat de Barcelona, Av. Joan XXIII S/N, E-08028, Barcelona, Spain
c Institute of Advanced Materials (INAM), Universitat Jaume I (UJI), Avenida de Vicent Sos Baynat, s/n, 12071 Castelló de la Plana, Spain
d Avantama AG, Laubisruetistrasse 50, Staefa 8712, Switzerland
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
#PerFut - Metal Halide Perovskites Fundamental Approaches and Technological Challenges
VALÈNCIA, Spain, 2023 March 6th - 10th
Organizers: Wang Feng, Giulia Grancini and Pablo P. Boix
Oral, Rafael Sánchez, presentation 299
DOI: https://doi.org/10.29363/nanoge.matsus.2023.299
Publication date: 22nd December 2022

After establishing themselves as promising active materials in the field of solar cells, perovskites are currently being explored for fabrication of low-cost, easy processable and highly efficient light emitting diodes (LEDs). Even though higher efficiencies are reported for perovskite-based LEDs (PeLEDs), the fabrication technique used is spin coated or vacuum evaporation. Herein, we show a successful incorporation of air stable inkjet-printed (IJP) NiOX as an electron blocking layer (EBL) in addition to poly(3,4‑ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) as hole injection layer. 2,4,6-tris[3(diphenylphosphinyl)phenyl]-1,3,5-triazine (POT2T) or inkjet-printed (IJP) SnO2 as hole blocking layer (HBL). Individual layer properties and the morphology of IJP NiOX were analysed through X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-Vis spectroscopy. Comparing p-n junction diodes with and without IJP NiOX as EBL shows a low leakage current and good rectification behaviour. Owing to its higher valence band levels, high hole mobility, low trap density at its interface with perovskite, PeLEDs with IJP NiOX and POT2T achieved higher luminance values of 19230 cd m-2 and an EQE of ~ 2.5 % using IJP of high purity CsPbBr3 layers. Furthermore, all inkjet printed PeLEDs replacing IJP SnO2 reached a luminance of 324 cd/m2 with an EQE of 0.017 %. Thus, an ambient processed PeLED with inorganic perovskite sandwiched between inorganic charge injection layers (CILs) which are also inkjet-printed is demonstrated. The results potentially lay a route towards ambient processed air stable all inorganic fully inkjet-printed PeLEDs.

The authors wish to thank the financial support from the European Commission via FET Open Grant (862656 – DROP-IT), MINECO (Spain) for grant PID2019-105658RB-I00 (PRITES project), Ministry of Science and Innovation of Spain under Project STABLE (PID2019-107314RB-I00), and Generalitat Valenciana via Prometeo Grant Q-Devices (Prometeo/2018/098).

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