Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
Publication date: 22nd December 2022
The Cu2O thin film is a p-type oxide semiconductor and has a high absorption system and is environment-friendly and resource-friendly. Therefore, the Cu2O thin film can be utilized in various fields of photoelectronic devices such as solar cell absorption layer, water splitting, or photocathode material of photovoltaic cell. The Cu2O thin film is deposited by an electrochemical deposition process, and it has the advantages of large-area deposition, precursor recycling, low cost, and low temperature. It is competitive both industrially and economically. However, the Cu2O thin films grown using atmospheric pressure and low-temperature based electrochemical deposition have lower conductivity than thin films grown using vacuum processes. As a result, when it actually operates, electrons and holes cannot move any more effectively than that based on vacuum processing. So as to solve the problem of conductivity of the thin film as described above, various methods such as optimization of the deposition method and application of the post-deposition process were carried out. In order to solve the existing problems, we have added Sb ion, a metal surface active agent, to maximize the preferential growth of the Cu2O thin film and improve the preferential mobility of the thin film in [111] direction. This study deals with the process of optimizing the conductivity of Cu2O thin film by controlling the molar concentration of Sb-ion. And we generated CuO on Cu2O by a simple oxidation process, so effectively transporting the photogenerated charge in the Cu2O photocell and the electrolyte. The CuO as a heterojunction material enables to provide the additional built-in electric field is perfectly suitable band position. Photoelectrochemical (PEC) performance was improved by applying Cu2O/CuO interface with high crystallinity and a well-aligned atomic arrangement by preparing a Cu2O absorber underlying layer preferentially oriented with [111] direction and forming a thin CuO overlayer (20–30 nm) via oxidation process at oxygen partial pressure. This showed considerable enhancement in photocurrent density (8.3 mA/cm2 at 0 V vs. RHE) and onset potential (0.83 V), compared with those of initial Cu2O. Importantly, these improvements were obtained without using photocatalytic materials on the photoelectrodes.
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