Highly Dispersed Fe-Substituted Colloidal Silica Nanoparticles in Acidic pH region for Tungsten Chemical Mechanical Planarization
Ganggyu Lee a, Sungmin Kim a, Hojin Jung b, Donghwan Kim a, Myungju Woo a, Yeram Lee a, Myeungwoo Ryu a, Ungyu Paik a
a Department of Energy Engineering, Hanyang University, Seoul, Republic of Korea, 04763
b Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, Republic of Korea, 04763
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
#GreenE - Advances in Green Energy Carriers
VALÈNCIA, Spain, 2023 March 6th - 10th
Organizers: Taeseup Song and Ungyu Paik
Poster, Ganggyu Lee, 272
Publication date: 22nd December 2022

Colloidal silica (SiO2) nanoparticles are widely used as an abrasive for tungsten (W) chemical mechanical planarization (CMP) at the acidic pH region. However, the poor dispersion stability of SiO2 nanoparticles caused by the low surface charge at the acidic pH region induces defects on the W surface during CMP. We report Fe-induced modified SiO2 nanoparticles with increased the surface charge in an acidic pH region. The Fe modification was controlled by adjusting the synthetic pH conditions that determine the Fe decoration and displacement behavior. Under acidic conditions, FexOy nanoparticles are formed on the SiO2 surface, whereas, under basic conditions, Si4+ substitution with Fe3+ occurs. The pH-dependent reaction implies that the degree of dissolution-reprecipitation substitution for the dissolved [SiO4]4-lattice is an important for the decoration and substitution behavior of Fe3+. In particular, the tetrahedral structure of [FeO4]5- is easily docked to the dissolved [SiO4]4- sites by stabilizing the dissolved defects for substitution. Fe-substituted SiO2 shows improved colloidal stability with a higher negative charge under acidic conditions. As a result, improved performance was achieved in W CMP by employing Fe-substituted SiO2. The removal rate increased from 67 to 122 Å/min, and the surface roughness decreased from 6.6 to 2.9 nm. Defects were also reduced from 11 scratches to 0 compared to bare SiO2 particles.

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