Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
DOI: https://doi.org/10.29363/nanoge.matsus.2023.211
Publication date: 22nd December 2022
The use of the spin of the electrons is having a tremendous impact on our electronics and computing technologies. Tell-tale examples are found in the controlled switching and reading of thin film ferromagnets, which enabled the realization of technologies such as the hard disk read head and the magnetic random-access memory. Despite the enormous progress that has been made, current devices are still based on metallic ferromagnets, which typically suffer from high-losses and are limited in frequency.
Magnetic insulators (MIs), such as rare earth garnets (R3Fe5O12; R=Y,Tm,..), have attracted a lot of interest because of their low Gilbert damping and high-frequency dynamics. Interestingly, unlike charge currents, spin currents can couple and propagate through MIs, making possible to realize spintronic devices based on these materials.
In this talk, we will discuss how we can exploit the charge to spin conversion phenomena in heavy metals for reading and writing the magnetic state of MIs [1,2], for electrically injecting and detecting magnons carrying spin information in MIs [3,4,5], and for stabilizing and driving topological magnetic textures (Néel chiral domain walls and skyrmions) in thin film magnetic oxides [6,7]. We will discuss the key role of antisymmetric chiral interactions on the emergence of non-reciprocal phenomena in both magnon transport and the dynamics of magnetic textures. We will see that the performance of garnet devices is better than their metallic counterparts and demonstrate novel device functionalities enabled by chirality that could be exploited in future memory and spin-logic applications.
*saul.velez@uam.es
We acknowledges support by the Spanish Ministry of Science and Innovation via Grant No. PID2021-122980OA-C53 and No. CEX-2018-000805-M, and by the Comunidad de Madrid through the Atracción de Talento Grant No. 2020-T1/IND20041.