Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
DOI: https://doi.org/10.29363/nanoge.matsus.2023.188
Publication date: 22nd December 2022
Besides the outstanding properties such as high absorption coefficient, bandgap tunability and long diffusion length, organometal halide perovskite devices (MHPs) continue to suffer from the consequences of their dual ionic/electronic nature. Hysteresis behaviour during IV measures is the direct sentinel of the ion migration or defect drift occurring in these devices. But this defect drift or ionic migration in MHPs can be positively utilized to design a novel memory device. In fact, perovskites are emerging as promising candidates for the next generation of resistive random-access memory (ReRAM) devices or memristors. ReRAM have been developed as promising next-generation of nonvolatile memory devices due to the simple device architecture, fast operation, and low power consumption[1]. Perovskite memristors are being reported lately with remarkable success due to their good electrical performances, meeting the requirements for memory technology; i.e: non-destructive reading process, nonvolatility, high ON/OFF ratio, and fast switching speed. [2]. Due to their solution processability, perovskite memristor devices have been fabricated both in their polycrystalline and monocrystalline forms, as thin-film and bulk configurations respectively. Outstanding results have been obtained for both.[3] However, the mechanisms behind their good performance and how their crystalline nature affects them are still under discussion. In this work, we report the first memristor device based on MAPbBr3 thin-film single crystal. The synergy between its thin-film configuration and its monocrystalline nature, allows displaying very high stability during operation conditions and massive operative currents, exhibiting an outstanding ON/OFF ratio of 106. The mechanisms governing the operation of this device are analysed in depth by impedance spectroscopy measures, contributing to a better understanding of the physics governing these devices.
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