Enhanced Luminescence of Perovskite Light Emitting Diodes by the doping of Dysprosium

S. Kumari*^{a, b}, N. Rajamanickam ^a, E. Martinez-Ferrero ^a, E. Palomares ^a.

^a Institute of Chemical Research of Catalonia (ICIQ), Spain.

^bUnit of Functional Printing & Embedded Devices, Centre Tecnològic de Catalunya EURECAT, Avda. Ernest Lluch 7, Mataró, E-08302, Spain.

skumari@iciq.es

Abstract:

B-site engineering for perovskite materials has been an important strategy for improving the performance of perovskite solar cells and PeLEDs. In recent years, Lanthanide Rare earth (RE) ions doped perovskites have the attention for their potential application in photovoltaics and light-emitting diodes¹. Lanthanide series materials like Ce³⁺, Tb³⁺, and Yb³⁺ were reported to improve the performance of Metal Halide Perovskites in the perovskite LEDs². In 2018 Meenu Venugopal et al investigated that Dysprosium (Dy) and Samarium (Sm) co-doped calcium zirconated perovskite CaZr_0.9Sm_0.025Dy_0.075O₃ system is a potential material for the white light LED application. They achieved pleasant white light at 354 nm excitation with CIE coordinates (0.3310, 0.3349)³.

In this work, we have employed the dysprosium-doped MAPbBr₃ perovskite as an emissive layer in perovskite light-emitting diodes. We have characterized the devices with MAPb_xDy_1-xBr₃ perovskite-based emissive layer and at different doping at concentrations and compared them with the pristine (un-doped) devices. We have found that the luminance of our devices has increased linearly through the doping of a small amount of Dysprosium element which is maximum at 5% and decreases when we further dope the perovskite layer in excess amount (10%).

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