Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
DOI: https://doi.org/10.29363/nanoge.matsus.2023.079
Publication date: 22nd December 2022
III-V quantum dots are printable semiconductors free of hazardous substances. In this talk, recent progress in III-V QDs synthesis at Ghent University and the device implementation of these materials is discussed. First, we show that the formation of InP-based QDs with near-unity photoluminescence quantum yield across the visible spectrum is now possible. This result is achieved by implementing a core/shell/shell structure, in which the composition of the inner shell is gradually changed from Se-rich to S-rich Zn(Se,S) with decreasing core QD size. We demonstrate that such application grade QDs can be used as color convertors to make on-chip QD-LEDs with +50% colo conversion efficiency. Second, we discuss how rational adaptations to the synthesis of In(As,P) QDs result in one-batch-one-size protocols yielding In(As,P) QD batches with a band-edge absorption up to 1600 nm, and we demonstrate the formation of QD photodiodes sensitive up to 1400 nm from these QDs. Both examples highlight how III-V QDs are evolving from a material for lab-scale proof-of-principle to devices ready of the consumer-market
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