Modeling of Perovskite Solar Cells from Device to Energy Yield Calculations
Pilar Lopez-Varo a
a Institut Photovoltaïque d'Ile-de-France (IPVF), Boulevard Thomas Gobert, 18, Palaiseau, France
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
#DeModeP23 - Characterisation and modeling of devices
VALÈNCIA, Spain, 2023 March 6th - 10th
Organizers: Enrique Hernández Balaguera and Alison Walker
Invited Speaker, Pilar Lopez-Varo, presentation 072
DOI: https://doi.org/10.29363/nanoge.matsus.2023.072
Publication date: 22nd December 2022

Device modeling and energy yield (EY) calculations are essential tools to optimize solar cell architectures. Device modeling through opto-electrical simulations allows to analyze device performance under standard conditions. In perovskite solar cells (PSC); the energy alignment at the interfaces, ion migration and potential distribution along the device play a critical role on device performance. To investigate them, we have characterized horizontal PSC microstructures[1]. We were able to draw the potential distribution along the solar cell structure by coupling X‐ray photoelectron spectroscopy (XPS) and drift-diffusion modeling[1]. Furthermore, in this work we considered the role of ion migration for the analysis of the band device structure. On the other hand, EY calculations estimate the total output generated energy of a solar cell after one year in a specific place. EY calculations also allow the analysis of device stability which is highly affected by device temperature[2]. Therefore, it is crucial to determine accurately the device temperature. To estimate cell temperature, we propose a thermal model which is a function of device parameters, environmental variables, and is strongly linked with the experimental optical-electrical-thermal performance[2]. We studied the effect of realistic temperature conditions on the performance of PSCs and their transient response to environmental external changes using a theoretical-experimental combined approach. Linking the experimental results and our model, we were able to evaluate the most sensible device layers that increment device temperature affecting device stability.

 

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info