Proceedings of MATSUS23 & Sustainable Technology Forum València (STECH23) (MATSUS23)
DOI: https://doi.org/10.29363/nanoge.matsus.2023.007
Publication date: 22nd December 2022
Organic semiconductor-based photovoltaic (OPV) devices have many advantageous properties which makes them attractive for future energy harvesting technologies [1]. Owing to the low charge carrier mobilities in OPVs, a substantial built-in voltage is generally required within the active layer to ensure efficient charge carrier extraction [2,3]. Nevertheless, reliable methods to determine the built-in voltage in thin film OPVs are currently lacking. Standard Mott-Schottky analysis of capacitance-voltage (C-V) characteristics has been frequently used in the past to determine the built-in voltage in organic semiconductor diode devices. However, since OPVs are typically dominated by contact-induced background carriers with highly non-uniform charge distributions [4], this technique is generally not applicable for thin film OPVs [5]. In this work, we present an alternative method based on C-V characteristics, which accounts for the influence of injected carriers. Guided by device simulations, we derive a theoretical framework which describes the relationship between the capacitance and the built-in voltage in thin diode devices. We further use numerical drift-diffusion simulations to validate the theoretical framework. Finally, we substantiate the method experimentally on organic solar cells. Based on these findings, we clarify the role of ohmic contacts and the meaning of the built-in voltage in OPVs and related devices.
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