Proceedings of Asia-Pacific Conference on Perovskite, Organic Photovoltaics&Optoelectronics (IPEROP25)
Publication date: 17th October 2024
Nickel oxide (NiOx) has emerged as a hole transport layer (HTL) in inverted perovskite solar cells (PSCs) due to its chemical resistance, high transparency, high hole mobility, and versatile fabrication methods. [1] However, the impact of fabrication methods of NiOx on interfacial properties between NiOx and perovskite and underlying mechanism remains unclear. This study explores how different fabrication methods—nanoparticle precursors (NP NiOx) and sputtering deposition (SP NiOx)—affect the interfacial space charge effects, charge transport, and device performance in NiOx/perovskite systems. SP NiOx exhibited a higher Ni3+/Ni2+ ratio and conductivity than NP NiOx. However, interfacial studies revealed that SP NiOx induces significant hole depletion when in contact with thin perovskite layers. However, this effect is less pronounced at the NP NiOx/perovskite interface. XPS analysis revealed that SP NiOx shows band bending, evidenced by chemical shifts with increasing perovskite thickness, while NP NiOx showed no significant shifts. This absence of chemical shifts in NP NiOx is attributed to the presence of carbon-based ligands, formed during synthesis, which mitigate interfacial effects and prevent hole depletion. Moreover, UPS analysis revealed that SP NiOx introduces a substantial hole barrier of 0.4 eV at the interface, hindering efficient hole transport. In contrast, NP NiOx demonstrated a smaller hole barrier, facilitating better hole extraction and improved device performance. In this study, we provide tailored NiOx properties for each fabrication method and propose an optimized strategy for applying NiOx as an effective HTL in perovskite solar cells.
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