Interfacial modification of CuSCN for Efficient Hole Transport Layer in Organic Photovoltaics by KSCN Doping
Chitsanucha Chattakoonpaisarn a, Patipan Sukpoonprom a, Pichaya Pattanasattayavong a
a Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology (VISTEC), Rayong, 21210 Thailand
Poster, Chitsanucha Chattakoonpaisarn, 085
Publication date: 17th October 2024

Interlayer materials play a vital role in mitigating the energetic mismatch between active materials and metal electrodes in various optoelectronic devices. The well-aligned electronic levels lead to an improvement in fill-factor (FF), open circuit voltage (Voc) and, consequently, power convention efficiency (PCE). Copper(I) thiocyanate (CuSCN) is a widely known candidate for transparent hole transport layer (HTL) in emerging solar cells, owing to its solution-processibility and low parasitic absorption in the visible and infrared range.[1] However, solution-processed films of CuSCN exhibit suboptimal microstructure and suffer from structural defects.[2-4] Doping CuSCN with appropriate dopants has shown promising improvements in microstructural and hole transport properties that result in enhanced device performance.[4,5] In this work, interfacial doping using potassium thiocyanate (KSCN) was employed to compensate for hole-killing thiocyanate vacancies (VSCN) in CuSCN films. An eight-fold improvement in the hole mobility was observed in CuSCN-based thin-film transistors when KSCN was included, suggesting a significant enhancement of hole transport properties. When KSCN/CuSCN was incorporated as the HTL in organic photovoltaics (OPVs), the excellent optical properties were unaffected while promising changes were observed in the modified OPVs: Voc increased from 0.73 up to 0.78 V along with a slight increase in FF. This enhanced device performance could be explained based on the improvement in microstructural and charge extraction ability of the HTL.

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