Proceedings of Asia-Pacific Conference on Perovskite, Organic Photovoltaics&Optoelectronics (IPEROP25)
Publication date: 17th October 2024
The light-induced segregation of iodide and bromide ions is observed in many wide bandgap, bromide-rich lead-halide perovskite materials having the general composition APb(BrxI1-x)3 with x→0.5. Solar cells with these materials are less stable and perform worse than their narrower bandgap, more iodine-rich counterparts. “Performance” is a global parameter; however, it is influenced by many factors, and additional work is needed to clarify the precise relationship between device performance and halide segregation. Here, we measure and compare current-voltage (J–V) curves and external quantum efficiencies (EQE) of several representative PIN devices, first in their initial state and again after 100 h operation under maximum power point conditions at 1 SUN equiv. The degree of halide segregation was quantified from the external quantum efficiency (EQE) data, specifically the changes in the derivative signal, d(EQE)/dE. We confirmed that systems with suppressed halide segregation had higher open circuit voltages (Voc). Device stability, on the other hand, was consistently lower for the wide bandgap devices, independent of the degree of halide segregation, because of the loss of short circuit current (Jsc) and lower fill factor (FF). We conclude that suppressing halide segregation is necessary to minimize voltage losses due to non-radiative charge carrier recombination. However, as the material properties of the bromide-rich perovskite materials pose several other unique challenges, suppressing halide segregation alone isn't sufficient to guarantee high performance and stability.