Ultrathin a-Si:H/oxide Transparent solar cells exceeding 1.2% Light Utilization Efficiency for BIPV and indoor PV applications
Alex Lopez-Garcia a, Gustavo Alvarez a, Pablo Ortega b, Cristobal Voz b, Joaquim Puigdollers b, Alejandro Perez Rodriguez a c
a Catalonia Institute for Energy Research, Jardins de les Dones de Negre 1, 2ª p., 08930, Barcelona, Spain
b Universitat Politècnica de Catalunya (UPC), Micro and Nano Technologies Group (MNT), Electronic Engineering Department, C /Jordi Girona 1-3. Module C4, Barcelona 08034, Catalonia, Spain.
c Institute of Nanoscience and Nanotechnology (IN2UB), Universitat de Barcelona, Catalonia, Spain
Poster, Alex Lopez-Garcia, 082
Publication date: 17th October 2024

Ultrathin a-Si:H/oxide Transparent solar cells exceeding 1.2% Light Utilization Efficiency for BIPV and indoor PV applications.

 

Photovoltaic Technologies (PV) stand as a fundamental component in the landscape of clean energies, emerging as a key solution to address environmental challenges. Specifically, Transparent Photovoltaics (TPV) represent a promising branch within this technology, seeking to expand their applications by overcoming challenges related to on-site integration, especially within architectural elements, in the so-called Building-Integrated Photovoltaic (BIPV) field. Unlike conventional approaches solely focused on efficiency, TPV introduces two additional dimensions: transparency and aesthetics. Meeting specific standards for transparency and aesthetics adds complexity to the process. Additionally, TPV devices hold promise for their exploitation in indoor environments for applications such as powering IoT devices and sensors with moderate power draws and with specific requirements in terms of aesthetics and transparency.

The presented work introduces wide-bandgap inorganic-based TPV devices utilizing ultrathin a-Si:H as a semi-transparent absorber, along with carrier-selective contacts and transparent electrodes.  Optimisation of the device architecture has led to the selection of an ultrathin window layer of a-SiCx:H (n) as electron selective contact, while the hole selective contact is made with an ALD-deposited V2O5. The basic device structure includes SLG/FTO/a-SiCx:H(n)/a-Si:H(30nm)/V2O5/AZO. This innovative approach achieves a record Power Conversion Efficiency (PCE) above 2.3% and an Average Photopic Transmittance (APT) of 52%, yielding a Light Utilization Efficiency (LUE) of 1.2%, surpassing the best reported state-of-the-art inorganic devices. The research includes optical spectrophotometry, dark and light J-V measurements using standard test conditions (AM1.5G solar spectrum 100 mWcm-2, T=25°C), and Spectral Response measurements. Additionally, Indoor PV characterization on best devices is performed with different illuminants (from 2700K (warm) to 6500 K (cool) at different illumination intensities) as application for powering IoT devices requiring high transparency.

This work holds significant relevance for the development of inorganic thin film Transparent PV technologies, especially those employing ultrathin absorbers. It may also stimulate interest in thin film technologies in general that rely on advanced ETL/Active layer/HTL architectures.

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