Smart semiconductor PANDI
Lauryna Monika Svirskaite a, Maryte Daskeviciene a, Tadas Malinauskas a
a Department of Organic Chemistry, Kaunas University of Technology, Kaunas, Lithuania
Poster, Lauryna Monika Svirskaite, 076
Publication date: 17th October 2024

Although photovoltaic technology (PV) is constantly improving and manufacturing costs of the devices are decreasing, 5.5 % of the total global electricity generation from solar cells in 2024 is not sufficient enough [1, 2]. To compete in electricity market photovoltaic technology needs to be further improved with future possibility to replace or complement silicon-based devices. Perovskite solar cells (PSCs) are technology currently being widely investigated and developed, which demonstrated one of the most significant progress in efficiency, starting from 3.8 % in 2009 to 26.7 % in 2024 [3, 4]. Novel concept of the self-assembling monolayer (SAM) transporting positive charges had a significant impact on the improvement of PSCs [5]. Nevertheless, efficiency of solar cells is also strongly dependent on type of semiconductor selected for electron transport [6]. There aren’t that many organic semiconductors efficient at electron transport and the field is dominated by expensive and not so easily producible fullerene and it's derivatives (e.g., PCBM), therefore it’s important to identify and apply less costly and more economical non-fullerene alternative in PSCs [7, 8].

Our research group, in collaboration with KAUST, has developed organic electron transporting semiconductor PANDI which was used in construction of perovskite solar cells. Using innovative concept of self-assembly the efficiency of PSC was significantly improved. As a result, low-temperature processed PSCs with PANDI self-assembled monolayer as electron-selective contact showed a maximum power conversion efficiency of 21.5%, representing the highest efficiency among n-i-p architecture PSCs with organic electron transporting layers. Solar cells achieved superior long-term stability under operating temperature conditions, compared to devices using SnO2 as n-type semiconductor.

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